Influence of thin films on photoelectric properties of solar cells based on p-GaAs/n-Cdo.25Zno.75So.eTeo.2 heterojunctions

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Influence of thin films on photoelectric properties of solar cells based on p-GaAs/n-Cdo.25Zno.75So.eTeo.2 heterojunctions

Elmira Alesgerovna Khanmamedova

Assistant, Faculty of information technology and control Azerbaijan State University of Oil and Industry, Baku, Azerbaijan

In general, heterojunctions, like electronic devices, are non-linear elements, which means that their OCA cannot be described by the usual Ohm's law. When illuminated from the side of the n-type semiconductor, the radiation is absorbed in the p-type semiconductor and creates an electron-hole pair. The short-circuit current and open-circuit voltage are the maximum current and voltage provided by the p-n junction, so the power of the p-n junction at these points is zero.[4,6,7] The FF parameter, called the fill factor, characterizes the maximum power of the p-n heterophotocell and graphically characterizes the squareness of the VAC heterojunction. In VAC, it is determined by the area of the rectangle:

The useful work factor of a hetero cell is determined by the following expression:

The useful efficiency of heterophotocells is inevitably influenced by many factors. Since the refractive index of most semiconductors is n>3, a large part of the incident light is reflected from the buffer layer. [1,2,10] Thus, photons whose energy is not enough for the internal photoeffect do not participate in the electrical energy conversion. To prevent this the method of covering the surface with a transparent interference layer was used. Cd1-xZnxO type thin layers are indispensable in such coatings. In the conducted research, Cd1-xZnxO type thin films were applied in GaAs- based heterojunctions. x=0.6; The influence of 0.7 and 0.8 thin films on the photoelectric properties of p-GaAs/n-Cd0.25Zn0.75S0.8Te0.2 heterojunctions was studied.[3,11,12] Distribution curves of photocurrent spectrum in Cd1-xZnxO heterojunctions without transparent layer are shown.(Fiq.1.)

Fig. 1. Spectral distribution curves of photocurrentin d ifferent TP modes in p- GaAs/n-Cd0.25Zn0.75S0.8Te0.2 heterojunctions without Cd1-xZnxO transparent layer.

Conclution

As it can be seen, after thermal treatment at 390°C temperature for 14 minutes, photosensitivity in wavelength region Xm=0.38-0.8 mkm increases dramatically.[5,8] It is true that when doping with Al, it is possible to reduce the resistance of ZnO thin films, although it is possible to increase the value of the current and the open circuit voltage in a certain sense, but this is not considered technologically very promising, and with their thin Cd1-xZnxO thin films is small in comparison.[9,11]

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