Photoelectric properties of semiconductor structure of porous silicon formed by metal-stimulated etching
The method of metal-stimulated etching and electrochemical anodic etching were compared. The photoelectric properties of the resulting structure are influenced by the processes of recharging traps. The highly sensitive photodiodes in solar energy.
| Рубрика | Физика и энергетика |
| Вид | статья |
| Язык | английский |
| Дата добавления | 27.02.2021 |
| Размер файла | 131,1 K |
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