Influence of stress-dependent surface generation of interstitials on stacking fault growth and dopant diffusion in silicon
Main calculation of activation volumes for interstitials and vacancie. Diffusion equations for point defects. Surface generation and recombination of point defects. Simulation of stacking fault growth. Simulation of stress-nediated dopant diffusion.
| Рубрика | Химия |
| Вид | статья |
| Язык | английский |
| Дата добавления | 29.04.2017 |
| Размер файла | 565,9 K |
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