RF magnetron sputtering of silicon carbide and silicon nitride films for solar cells
The use of high-frequency-magnetron sputtering, reactive solid-phase target in argon atmosphere to obtain silicon carbide and a film of silicon nitride. Using the obtained samples to create solar cells on substrates of monocrystalline silicon of p-type.
| Рубрика | Физика и энергетика |
| Предмет | Physics |
| Вид | статья |
| Язык | английский |
| Прислал(а) | V.S. Zakhvalinskii |
| Дата добавления | 13.10.2016 |
| Размер файла | 487,1 K |
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