Photoeffect peculiarities in macroporous silicon structures
The effects of increase in photoconductivity in the macroporous silicon structures. Founding to achieve a maximum at the distance between macropores equal to the double thickness of the Shottky layer what corresponds to the experimental results.
| Рубрика | Физика и энергетика |
| Предмет | Physics |
| Вид | статья |
| Язык | английский |
| Прислал(а) | L.A. Karachevtseva |
| Дата добавления | 01.04.2014 |
| Размер файла | 243,9 K |
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