Photoeffect peculiarities in macroporous silicon structures

The effects of increase in photoconductivity in the macroporous silicon structures. Founding to achieve a maximum at the distance between macropores equal to the double thickness of the Shottky layer what corresponds to the experimental results.

Рубрика Физика и энергетика
Предмет Physics
Вид статья
Язык английский
Прислал(а) L.A. Karachevtseva
Дата добавления 01.04.2014
Размер файла 243,9 K

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