A model for minority carrier mobility in polysilicon emitters
Effect of the segregation of electrically active dopants. Diffusion theory of the hole current. Polysilicon emitter contacts and its dependence on dopant concentration. Hole mobility versus grain size for two values of the total dopant concentration.
Рубрика | Химия |
Предмет | Chemistry |
Вид | статья |
Язык | английский |
Прислал(а) | Аля |
Дата добавления | 29.04.2017 |
Размер файла | 54,2 K |
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